TRANSMISSION ELECTRON-MICROSCOPIC STUDY OF THE SURFACE AND INTERFACE OF CARBONIZED-LAYER SI(100)

被引：6
作者：
IWAMI, M
HIRAI, M
KUSAKA, M
YOKOTA, Y
MATSUNAMI, H
机构：
[1] OKAYAMA UNIV,MICROANAL RES CTR,OKAYAMA 700,JAPAN
[2] KYOTO UNIV,DEPT ELECT ENGN,KYOTO 606,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1989年 / 28卷 / 02期
关键词：
D O I：
10.1143/JJAP.28.L293
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L293 / L295
页数：3
相关论文
共 7 条
[1]   LOW-TEMPERATURE TI-SILICIDE FORMING REACTION IN VERY THIN TI-SIO2/SI(111) CONTACT SYSTEMS [J].
IWAMI, M ;
HIRAKI, A .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (05) :530-536
[2]   COMPOSITIONAL ANALYSIS OF SEMICONDUCTOR HETEROJUNCTIONS - STRUCTURE OF SIC (THIN BUFFER LAYER)/SI(100) SYSTEM [J].
IWAMI, M ;
KUSAKA, M ;
HIRAI, M ;
NAKAMURA, H ;
KOSHIKAWA, T ;
SHIBAHARA, K ;
MATSUNAMI, H .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 33 (1-4) :615-618
[3]   A NEW APPLICATION OF SOFT-X-RAY SPECTROSCOPY TO A NON-DESTRUCTIVE ANALYSIS OF A FILM SUBSTRATE CONTACT SYSTEM - CARBONIZED-LAYER (ULTRA-THIN-FILM) SI(100) [J].
IWAMI, M ;
KUSAKA, M ;
HIRAI, M ;
NAKAMURA, H ;
SHIBAHARA, K ;
MATSUNAMI, H .
SURFACE SCIENCE, 1988, 199 (03) :467-475
[4]   EPITAXIAL-GROWTH AND ELECTRIC CHARACTERISTICS OF CUBIC SIC ON SILICON [J].
NISHINO, S ;
SUHARA, H ;
ONO, H ;
MATSUNAMI, H .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (10) :4889-4893
[5]  
NISHINO S, 1980, JPN J APPL PHYS, V19, pL535
[6]   ELECTRON-MICROSCOPE OBSERVATION OF AU/SI (111) INTERFACE IN ATOMIC LEVEL [J].
YOKOTA, Y ;
HASHIMOTO, H ;
SAITO, N ;
ENDOH, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (03) :L168-L170
[7]  
1960, HIGH TEMPERATURE SEM
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