ION-BEAM INDUCED ISOLATION OF GALLIUM-ARSENIDE LAYERS

被引：3

作者：

SENGUPTA, D ^{[1
]}

ZEMANSKI, JM ^{[1
]}

WILLIAMS, JS ^{[1
]}

JOHNSON, ST ^{[1
]}

POGANY, AP ^{[1
]}

机构：

[1] ROYAL MELBOURNE INST TECHNOL,DEPT COMMUN & ELECTR ENGN,MELBOURNE 3000,AUSTRALIA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 42卷 / 03期

关键词：

D O I：

10.1016/0168-583X(89)90443-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：328 / 333

页数：6

共 10 条

[1]

CHIN PK, 1986, TM5236386073102 BELL

[2]

DARANZO DC, 1982, IEEE T MICROW THEORY, V30, P955

[3] PROTON IMPLANTATION ISOLATION FOR MICROWAVE MONOLITHIC CIRCUITS [J].

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IEEE ELECTRON DEVICE LETTERS, 1983, 4 (02) :29-31

[4]

NYGREN E, 1987, MATER RES SOC S P, V82, P127

[5] ION-IMPLANTATION IN GAAS [J].

PEARTON, SJ ;

POATE, JM ;

SETTE, F ;

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JACOBSON, DC ;

WILLIAMS, JS .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :369-380

[6] IRRADIATION-INDUCED DEFECTS IN GAAS [J].

PONS, D ;

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[7] DAMAGE RANGES FOR IMPLANTED HYDROGEN ISOTOPES IN GALLIUM-ARSENIDE [J].

STEEPLES, K .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4087-4089

[8] DEPTH DISTRIBUTIONS AND RANGE PARAMETERS FOR HE IMPLANTED IN SI AND GAAS [J].

WILSON, RG ;

DELINE, VR ;

HOPKINS, CG .

APPLIED PHYSICS LETTERS, 1982, 41 (10) :929-931

[9] PROTON, DEUTERON, AND HELIUM IMPLANTATION INTO GAAS AND LINBO3 FOR WAVE-GUIDE FABRICATION [J].

WILSON, RG ;

BETTS, DA ;

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ZAVADA, JM ;

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JOURNAL OF APPLIED PHYSICS, 1985, 57 (11) :5006-5010

[10]

Ziegler J.F., 1985, STOPPING RANGES IONS

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