THE ROLE OF SURFACE CLEANING IN THE ELLIPSOMETRIC STUDIES OF ION-IMPLANTED SILICON

被引：10

作者：

LOHNER, T

VALYI, G

MEZEY, G

KOTAI, E

GYULAI, J

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1981年 / 54卷 / 3-4期

关键词：

D O I：

10.1080/00337578108210055

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：251 / 252

页数：2

共 11 条

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[5]

Kucirkova A., 1976, Radiation Effects, V28, P129, DOI 10.1080/00337577608237430

[6]

LOHNER T, 1980, P C ION BEAM MODIFIC

[7] IMPROVED DEPTH RESOLUTION OF CHANNELING MEASUREMENTS IN RUTHERFORD BACKSCATTERING BY A DETECTOR TILT [J].

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MANUABA, A .

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[8] CHARACTERIZATION OF (P-31)+-IMPLANTED SI LAYERS BY ELLIPSOMETRY [J].

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[9] ELLIPSOMETRIC STUDY OF SILICON IMPLANTED WITH BORON IONS IN LOW-DOSES [J].

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APPLIED PHYSICS LETTERS, 1979, 34 (08) :518-519

[10] ELLIPSOMETRIC STUDY OF ANNEALING PROCESSES OF PHOSPHORUS-ION-IMPLANTED LAYERS OF SI [J].

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TOKUYAMA, T .

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