FORMATION OF P+-P--N- JUNCTIONS IN INP BY CD DIFFUSION

被引：28
作者：
CHIN, AK
DUTT, BV
TEMKIN, H
BONNER, WA
ROCCASECCA, DD
机构：
来源：
APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 11期
关键词：
D O I：
10.1063/1.91375
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：924 / 926
页数：3
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共 16 条
[1]   ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J].
ABRAHAMS, MS ;
BUIOCCHI, CJ .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2855-&
[2]   SCANNING ELECTRON-MICROSCOPY AND CATHODOLUMINESCENCE OF ZNSEXTE1-XP-N JUNCTIONS [J].
AVEN, M ;
BOLON, RB ;
LUDWIG, GW ;
DEVINE, JZ .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) :4136-&
[3]  
BALK LJ, 1975, IITRI SCANNING ELECT, P448
[4]   REPRODUCIBLE PREPARATION OF TWIN-FREE INP CRYSTALS USING THE LEC TECHNIQUE [J].
BONNER, WA .
MATERIALS RESEARCH BULLETIN, 1980, 15 (01) :63-72
[5]  
DEVLIN WJ, 1978, 7TH P INT S GAAS REL, P510
[6]   DIFFUSION OF ZINC IN INDIUM-PHOSPHIDE AT 700 DEGREES C [J].
HOOPER, A ;
TUCK, B ;
BAKER, AJ .
SOLID-STATE ELECTRONICS, 1974, 17 (06) :531-+
[7]   HIGH AVALANCHE GAIN IN SMALL-AREA INP PHOTO-DIODES [J].
LEE, TP ;
BURRUS, CA ;
DENTAI, AG ;
BALLMAN, AA ;
BONNER, WA .
APPLIED PHYSICS LETTERS, 1979, 35 (07) :511-513
[8]  
MAHAJAN SM, COMMUNICATION
[9]  
Melchior H., 1973, Journal of Luminescence, V7, P390, DOI 10.1016/0022-2313(73)90076-8
[10]  
MILLER BI, 1979, 21ST EMC
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