FABRICATION AND CHARACTERISTICS OF SCHOTTKY GATED POLY(3-ALKYLTHIOPHENE) FIELD-EFFECT TRANSISTORS

被引：50

作者：

OHMORI, Y

TAKAHASHI, H

MURO, K

UCHIDA, M

KAWAI, T

YOSHINO, K

机构：

[1] Osaka University, Suita, Osaka, 565, Yamada-oka

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 4A期

关键词：

POLY(3-ALKYLTHIOPHENE); CONDUCTING POLYMERS; FIELD EFFECT TRANSISTORS; METAL-SEMICONDUCTOR TRANSISTORS; SCHOTTKY CONTACTS;

D O I：

10.1143/JJAP.30.L610

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fabrication and characterization of Schottky gated poly(3-alkylthiophene) field effect transistors have been reported. The transistors have been realized using free-standing poly(3-alkylthiophene) films with Schottky gated electrode configuration with low drive voltages. From the FET characteristics, the carrier mobility is evaluated to be 3 x 10(-3) cm2/V.s.

引用

页码：L610 / L611

页数：2

共 9 条

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