SURFACE-STATES AND THE SURFACE-STRUCTURE OF CLEAVED SILICON

被引：26

作者：

PARKE, AW

MCKINLEY, A

WILLIAMS, RH

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1978年 / 11卷 / 24期

关键词：

D O I：

10.1088/0022-3719/11/24/014

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L993 / L996

页数：4

共 12 条

[1] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS [J].

EASTMAN, DE ;

GROBMAN, WD .

PHYSICAL REVIEW LETTERS, 1972, 28 (21) :1378-&

[2] SURFACE STRUCTURES AND PROPERTIES OF DIAMOND-STRUCTURE SEMICONDUCTORS [J].

HANEMAN, D .

PHYSICAL REVIEW, 1961, 121 (04) :1093-&

[3] STRUCTURAL PROPERTIES OF CLEAVED SILICON AND GERMANIUM SURFACES [J].

LANDER, JJ ;

GOBELL, GW ;

MORRISON, J .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) :2298-+

[4] ANGULARLY RESOLVED PHOTOEMISSION FROM GASE USING LINE AND SYNCHROTRON SOURCES [J].

MCGOVERN, IT ;

PARKE, A ;

WILLIAMS, RH .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (18) :L511-L514

[5] ENERGY-BANDS OF RECONSTRUCTED SURFACE STATES OF CLEAVED SI [J].

PANDEY, KC ;

PHILLIPS, JC .

PHYSICAL REVIEW LETTERS, 1975, 34 (23) :1450-1453

[6] AUGER-ELECTRON SPECTROSCOPY [J].

RIVIERE, JC .

CONTEMPORARY PHYSICS, 1973, 14 (06) :513-539

[7] COVALENT SUPERLATTICE STRUCTURES AT SILICON (111) SURFACES [J].

ROWE, JE ;

PHILLIPS, JC .

PHYSICAL REVIEW LETTERS, 1974, 32 (23) :1315-1318

[8] MEASUREMENT OF ANGLE OF DANGLING-BOND PHOTOEMISSION FROM CLEAVED SILICON [J].

ROWE, JE ;

TRAUM, MM ;

SMITH, NV .

PHYSICAL REVIEW LETTERS, 1974, 33 (22) :1333-1335

[9] PHOTOEMISSION MEASUREMENTS OF STEP-DEPENDENT SURFACE STATES ON CLEAVED SILICON [J].

ROWE, JE ;

CHRISTMAN, SB ;

IBACH, H .

PHYSICAL REVIEW LETTERS, 1975, 34 (14) :874-877

[10] SURFACE AND BULK CONTRIBUTIONS TO ULTRAVIOLET PHOTOEMISSION SPECTRA OF SILICON [J].

ROWE, JE ;

IBACH, H .

PHYSICAL REVIEW LETTERS, 1974, 32 (08) :421-424

← 1 2 →