ON THE FAILURE MECHANISMS OF TITANIUM NITRIDE TITANIUM SILICIDE BARRIER CONTACTS UNDER HIGH-CURRENT STRESS

被引：10
作者：
FU, KY
PYLE, RE
机构：
[1] Motorola Inc, Austin, TX, USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 12期
关键词：
D O I：
10.1109/16.8789
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
11
引用
收藏
页码：2151 / 2159
页数：9
相关论文
共 11 条
[1]  
CHRISTOU A, 1973, J APPL PHYS, P2975
[2]  
DECHIARO LF, 1981, 19TH P INT REL PHYS, P223
[3]  
GARGINI PA, 1982, 20TH P ANN REL PHYS, P66
[4]  
Neppl F., 1984, 22nd Annual Proceedings on Reliability Physics 1984 (Catalog No. 84CH1990-1), P185, DOI 10.1109/IRPS.1984.362042
[5]  
OKAMOTO T, 1986, S VLSI TECHNOL, P51
[6]  
Rosenberg R., 1978, Thin films. Interdiffusion and reactions, P13
[7]  
Steenwyk S. D., 1986, 24th Annual Proceedings Reliability Physics 1986 (Cat. No.86CH2256-6), P30, DOI 10.1109/IRPS.1986.362108
[8]   AL/W/TINX/TISIY/SI BARRIER TECHNOLOGY FOR 1.0-MU-M CONTACTS [J].
SUN, SW ;
LEE, JJ ;
BOECK, B ;
HANCE, RL .
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (02) :71-73
[9]  
SUN SW, 1987, HIGHLY RELIABLE CONT
[10]  
SUN SW, 1987, MATER RES SOC S P, V92, P165
12