TEMPERATURE-DEPENDENCE OF BAND-STRUCTURE OF GERMANIUM-TYPE AND ZINCBLENDE-TYPE SEMICONDUCTORS

被引：62
作者：
AUVERGNE, D
CAMASSEL, J
MATHIEU, H
CARDONA, M
机构：
[1] UNIV SCI & TECH LANGUEDOC,CNRS,CTR ETUD ELECTR SOLIDES,34060 MONTPELLIER,FRANCE
[2] MAX PLANCK INST FESTKORPERFORSCH,STUTTGART,WEST GERMANY
来源：
PHYSICAL REVIEW B | 1974年 / 9卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.9.5168
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：5168 / 5177
页数：10
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