EPITAXIAL-GROWTH AND MAGNETIC-PROPERTIES OF FE16N2 FILMS WITH HIGH SATURATION MAGNETIC-FLUX DENSITY

被引：202

作者：

KOMURO, M

KOZONO, Y

HANAZONO, M

SUGITA, Y

机构：

[1] Hitachi Research Laboratory, Hitachi, Ltd.

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 09期

关键词：

D O I：

10.1063/1.344689

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fe-N films with thicknesses of 70-1000 Å were deposited by MBE onto Fe films which were epitaxially grown onto GaAs(100) substrates. Without the Fe layer, epitaxially grown Fe-N films could not be obtained due to a reaction between Fe-N and GaAs. TEM observations and x-ray diffraction patterns showed that the epitaxially grown Fe-N films consist of Fe16N2 and Fe, and that crystal orientation is Fe16N2 (001)//Fe(110). It was found that the saturation magnetic flux density (B s) increases as the thickness of the Fe-N films decreases. This is because the volume ratio of Fe16N2 in the Fe-N films increases with decreasing Fe-N film thickness. The maximum value for B s is 2.66 T, and the volume ratio is 85%. These results indicate that Fe16N2 has a high saturation magnetic flux density of 2.8-3.0 T.

引用

页码：5126 / 5130

页数：5

共 6 条

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