PROLONGED AND RAPID THERMAL ANNEALING OF BORON IMPLANTED SILICON

被引：16

作者：

PETER, CR ^{[1
]}

DESOUZA, JP ^{[1
]}

HASENACK, CM ^{[1
]}

机构：

[1] UNIV FED RIO GRANDE SUL, INST FIS, BR-90049 PORTO ALEGRE, RS, BRAZIL

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 05期

关键词：

D O I：

10.1063/1.341610

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2696 / 2699

页数：4

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