ELECTRICAL-PROPERTIES OF NORMAL-TYPE PB1-XSNXTE-CD

被引：0

作者：

CHASHCHIN, SP

GUZHOVA, IP

BARYSHEV, NS

KHARIONOVSKII, YS

AVERYANOV, IS

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1982年 / 16卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：336 / 338

页数：3

共 13 条

[1] CHASHCHIN SP, 1979, SOV PHYS SEMICOND+, V13, P101
[2] CHASHCHIN SP, 1977, SOV PHYS SEMICOND+, V11, P471
[3] CHASHCHIN SP, 1981, SOV PHYS SEMICOND+, V15, P324
[4] CHASHCHIN SP, 1978, SOV PHYS SEMICOND+, V12, P1429
[5] CHASHCHIN SP, 1977, SOV PHYS SEMICOND+, V11, P579
[6] CHASHCHIN SP, 1978, SOV PHYS SEMICOND+, V12, P1419
[7] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP
HENRY, CH
LANG, DV
[J]. PHYSICAL REVIEW B, 1977, 15 (02): : 989 - 1016
[8] KAGAN Y, 1980, JETP LETT+, V31, P335
[9] LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS
LANG, DV
LOGAN, RA
[J]. PHYSICAL REVIEW LETTERS, 1977, 39 (10) : 635 - 639
[10] STUDY OF CD DIFFUSION INTO PBTE AND PB1-XSNXTE CRYSTALS USING HALL-EFFECT CONDUCTIVITY AND CD SOLUBILITY MEASUREMENTS
SILBERG, E
ZEMEL, A
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (12) : 807 - 809