A TEMPERATURE MODEL FOR THE GAAS-MESFET

被引：80
|
作者：
CURTICE, WR
YUN, YH
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 08期
关键词：
D O I：
10.1109/T-ED.1981.20466
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：954 / 962
页数：9
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