INALAS/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH AN N-DOPED INGAAS SPACER

Static and high frequency characteristics of InAlAs/InGaAs heterojunction bipolar transistors (HBTs) with a 200-angstrom-thick n-doped InGaAs spacer between the emitter and base are investigated. The presence of the deep notch (DELTAE(n)) at the emitter-base hetero-interface is confirmed from the low temperature I-V data, in which the specific humps corresponding to electrons tunneling to the quantized electron levels in the deep notch are found in the base current for the first time. Electron injection energy (E(i)) into the base for the proposed HBTs is reduced by DELTAE(n) as compared with that for the HBTs without the n-doped spacer. Although the spacer is as thick as 200 angstrom, recombination current is low because the E(i) still remains sufficiently high. A current gain of as high as 200 is obtained despite the higher base doping of 2 x 10(19) cm-3. By employing the 200 angstrom spacer, E(i) is optimized successfully for minimizing the sum of the base and collector transit times.