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DOPING DEPENDENCE OF HOLE LIFETIME IN TYPE GAAS
被引:96
作者
:
HWANG, CJ
论文数:
0
引用数:
0
h-index:
0
HWANG, CJ
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1971年
/ 42卷
/ 11期
关键词
:
D O I
:
10.1063/1.1659787
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:4408 / &
相关论文
共 25 条
[1]
ASHLEY KL, 1967, P IEEE T ELEC DEVICE, VED14, P429
[2]
DIFFUSION LENGTHS OF ELECTRONS AND HOLES IN GAAS
AUKERMAN, LW
论文数:
0
引用数:
0
h-index:
0
AUKERMAN, LW
MILLEA, MF
论文数:
0
引用数:
0
h-index:
0
MILLEA, MF
MCCOLL, M
论文数:
0
引用数:
0
h-index:
0
MCCOLL, M
[J].
JOURNAL OF APPLIED PHYSICS,
1967,
38
(02)
: 685
-
&
[3]
ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB
BURSTEIN, E
论文数:
0
引用数:
0
h-index:
0
BURSTEIN, E
[J].
PHYSICAL REVIEW,
1954,
93
(03):
: 632
-
633
[4]
INTERFEROMETRIC PHASE SHIFT TECHNIQUE FOR MEASURING SHORT FLUORESCENT LIFETIMES
CARBONE, RJ
论文数:
0
引用数:
0
h-index:
0
CARBONE, RJ
LONGAKER, PR
论文数:
0
引用数:
0
h-index:
0
LONGAKER, PR
[J].
APPLIED PHYSICS LETTERS,
1964,
4
(02)
: 32
-
&
[5]
GUTKIN AA, 1965, SOV PHYS SOLID STATE, V1, P58
[6]
LIFETIMES OF BOUND EXCITONS IN CDS
HENRY, CH
论文数:
0
引用数:
0
h-index:
0
HENRY, CH
NASSAU, K
论文数:
0
引用数:
0
h-index:
0
NASSAU, K
[J].
PHYSICAL REVIEW B,
1970,
1
(04):
: 1628
-
&
[7]
OPTICAL PROPERTIES OF N-TYPE GAAS .2. FORMATION OF EFFICIENT HOLE TRAPS DURING ANNEALING IN TE-DOPED GAAS
HWANG, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Incorporated, Murray Hill
HWANG, CJ
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(11)
: 4584
-
&
[8]
CALCULATION OF FERMI ENERGY AND BANDTAIL PARAMETERS IN HEAVILY DOPED DEGENERATE NORMAL-TYPE GAAS
HWANG, CJ
论文数:
0
引用数:
0
h-index:
0
HWANG, CJ
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(06)
: 2668
-
+
[9]
OPTICAL PROPERTIES OF N-TYPE GAAS .I. DETERMINATION OF HOLE DIFFUSION LENGTH FROM OPTICAL ABSORPTION AND PHOTOLUMINESCENCE MEASUREMENTS
HWANG, CJ
论文数:
0
引用数:
0
h-index:
0
HWANG, CJ
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(09)
: 3731
-
&
[10]
IMPROVED PHASE SHIFT TECHNIQUE FOR MEASURING SHORT CARRIER LIFETIME IN SEMICONDUCTORS
HWANG, CJ
论文数:
0
引用数:
0
h-index:
0
HWANG, CJ
[J].
REVIEW OF SCIENTIFIC INSTRUMENTS,
1971,
42
(07)
: 1084
-
&
←
1
2
3
→
共 25 条
[1]
ASHLEY KL, 1967, P IEEE T ELEC DEVICE, VED14, P429
[2]
DIFFUSION LENGTHS OF ELECTRONS AND HOLES IN GAAS
AUKERMAN, LW
论文数:
0
引用数:
0
h-index:
0
AUKERMAN, LW
MILLEA, MF
论文数:
0
引用数:
0
h-index:
0
MILLEA, MF
MCCOLL, M
论文数:
0
引用数:
0
h-index:
0
MCCOLL, M
[J].
JOURNAL OF APPLIED PHYSICS,
1967,
38
(02)
: 685
-
&
[3]
ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB
BURSTEIN, E
论文数:
0
引用数:
0
h-index:
0
BURSTEIN, E
[J].
PHYSICAL REVIEW,
1954,
93
(03):
: 632
-
633
[4]
INTERFEROMETRIC PHASE SHIFT TECHNIQUE FOR MEASURING SHORT FLUORESCENT LIFETIMES
CARBONE, RJ
论文数:
0
引用数:
0
h-index:
0
CARBONE, RJ
LONGAKER, PR
论文数:
0
引用数:
0
h-index:
0
LONGAKER, PR
[J].
APPLIED PHYSICS LETTERS,
1964,
4
(02)
: 32
-
&
[5]
GUTKIN AA, 1965, SOV PHYS SOLID STATE, V1, P58
[6]
LIFETIMES OF BOUND EXCITONS IN CDS
HENRY, CH
论文数:
0
引用数:
0
h-index:
0
HENRY, CH
NASSAU, K
论文数:
0
引用数:
0
h-index:
0
NASSAU, K
[J].
PHYSICAL REVIEW B,
1970,
1
(04):
: 1628
-
&
[7]
OPTICAL PROPERTIES OF N-TYPE GAAS .2. FORMATION OF EFFICIENT HOLE TRAPS DURING ANNEALING IN TE-DOPED GAAS
HWANG, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Incorporated, Murray Hill
HWANG, CJ
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(11)
: 4584
-
&
[8]
CALCULATION OF FERMI ENERGY AND BANDTAIL PARAMETERS IN HEAVILY DOPED DEGENERATE NORMAL-TYPE GAAS
HWANG, CJ
论文数:
0
引用数:
0
h-index:
0
HWANG, CJ
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(06)
: 2668
-
+
[9]
OPTICAL PROPERTIES OF N-TYPE GAAS .I. DETERMINATION OF HOLE DIFFUSION LENGTH FROM OPTICAL ABSORPTION AND PHOTOLUMINESCENCE MEASUREMENTS
HWANG, CJ
论文数:
0
引用数:
0
h-index:
0
HWANG, CJ
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(09)
: 3731
-
&
[10]
IMPROVED PHASE SHIFT TECHNIQUE FOR MEASURING SHORT CARRIER LIFETIME IN SEMICONDUCTORS
HWANG, CJ
论文数:
0
引用数:
0
h-index:
0
HWANG, CJ
[J].
REVIEW OF SCIENTIFIC INSTRUMENTS,
1971,
42
(07)
: 1084
-
&
←
1
2
3
→