INTERFACES IN GAAS ALAS QUANTUM-WELL STRUCTURES

被引：56
|
作者：
GAMMON, D
SHANABROOK, BV
KATZER, DS
机构：
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 25期
关键词：
D O I：
10.1063/1.103807
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present a study of the bottom interface (GaAs on AlAs) in GaAs/AlAs single quantum wells using reflection high-energy electron diffraction, luminescence, and luminescence excitation spectroscopy. The results indicate that it is possible to grow GaAs/AlAs quantum wells with two truly smooth interfaces using molecular beam epitaxy with growth interrupts. A set of samples in which the growth interrupt time on the bottom interface was changed illustrates in a systematic way the qualitative behavior possible in luminescence spectra. In particular, the energy splitting between the exciton peaks is observed to vary in the rough regime and in the truly smooth regime, although in a different way.
引用
收藏
页码：2710 / 2712
页数：3
相关论文
共 50 条
  • [1] EXCITONS, PHONONS, AND INTERFACES IN GAAS/ALAS QUANTUM-WELL STRUCTURES
    GAMMON, D
    SHANABROOK, BV
    KATZER, DS
    PHYSICAL REVIEW LETTERS, 1991, 67 (12) : 1547 - 1550
  • [2] Resonant Γ-Χ-transfer in GaAs/AlAs quantum-well structures
    Schmidt, SR
    Seilmeier, A
    Zibik, EA
    Vorobjev, LE
    Zhukov, AE
    Ustinov, VM
    NANOTECHNOLOGY, 2001, 12 (04) : 504 - 507
  • [3] CHARACTERIZATION OF GAAS/ALAS QUANTUM-WELL STRUCTURES BY HREM AND LTSCL
    HOLT, DB
    NORMAN, CE
    SALVIATI, G
    FRANCHI, S
    BOSACCHI, A
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1991, (117): : 689 - 694
  • [4] MBE GROWTH OF GAAS/ALGAAS(ALAS) QUANTUM-WELL AND SUPERLATTICE STRUCTURES
    CHEN, ZG
    SUN, DZ
    LIANG, JB
    XU, ZY
    HUANG, YH
    GE, WK
    KONG, MY
    SUPERLATTICES AND MICROSTRUCTURES, 1987, 3 (03) : 325 - 328
  • [5] INSITU AND EXSITU CHARACTERIZATION OF GAAS/ALAS QUANTUM-WELL STRUCTURES USING SPECTROSCOPIC ELLIPSOMETRY
    EDWARDS, JL
    MARACAS, GN
    SHIRALAGI, KT
    CHOI, KY
    DROOPAD, R
    JOURNAL OF CRYSTAL GROWTH, 1992, 120 (1-4) : 78 - 83
  • [6] EFFECTS OF ELECTRONIC COUPLING ON THE BAND ALIGNMENT OF THIN GAAS/ALAS QUANTUM-WELL STRUCTURES
    MOORE, KJ
    DAWSON, P
    FOXON, CT
    PHYSICAL REVIEW B, 1988, 38 (05): : 3368 - 3374
  • [7] CORRELATION BETWEEN THE STRUCTURAL AND OPTICAL-PROPERTIES OF ALAS/GAAS QUANTUM-WELL STRUCTURES
    WALTHER, T
    GERTHSEN, D
    CARIUS, R
    FORSTER, A
    URBAN, K
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1993, 1993, (134): : 449 - 454
  • [8] MACROSCOPIC BEHAVIOR OF LONGITUDINAL OPTICAL PHONONS IN A ALAS/GAAS/ALAS QUANTUM-WELL
    ZIANNI, X
    BUTCHER, PN
    DHARSSI, I
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1992, 4 (06) : L77 - L83
  • [9] Investigation of In segregation in InAs/AlAs quantum-well structures
    Schowalter, M
    Rosenauer, A
    Gerthsen, D
    Arzberger, M
    Bichler, M
    Abstreiter, G
    APPLIED PHYSICS LETTERS, 2001, 79 (26) : 4426 - 4428
  • [10] GAAS-ALAS AND SI-SIGE QUANTUM-WELL STRUCTURES FOR APPLICATIONS IN NONLINEAR OPTICS
    SHAW, MJ
    WONG, KB
    CORBIN, E
    JAROS, M
    SOLID-STATE ELECTRONICS, 1994, 37 (4-6) : 1303 - 1306
12345