Advances in Ultra Low Dielectric Constant Ordered Porous Materials

Advances in ultra low dielectric constant ordered porous materials are discussed. The high k material aims to allow a field to be generated at the surface of the device channel while minimizing gate leakage. On the other hand, the low k material has the aim to minimize field penetration between conductor elements. Microporous zeolite thin films can be prepared via a simple spin-on method or by in situ growth. Work is also conducted in investigating binder materials with low permittivities and it is found that polymers are promising in this respect because of their low inherent k values approaching 2.0 and hydrophobic properties that limit water adsorption and compromise of the dielectric properties. Zhao and colleagues produced mesoporous films with dielectric constants between 1.45 and 2.1 using very large pores.