共 50 条
- [1] ELECTRONIC-STRUCTURE OF OXYGEN-DOPED GALLIUM-ARSENIDE JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (22): : L831 - L834
- [2] INFRARED-ABSORPTION SPECTRA OF OXYGEN-DOPED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (05): : 590 - 591
- [3] ELECTRON-MOBILITY IN OPTICALLY DECOMPENSATED OXYGEN-DOPED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (04): : 524 - 525
- [6] DEEP LEVEL STUDIES OF OXYGEN DOPED GALLIUM-ARSENIDE BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 256 - 256
- [7] INFLUENCE OF COMPENSATION ON THE EDGE LUMINESCENCE OF HEAVILY DOPED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (04): : 378 - 380
- [8] BREAKDOWN CHARACTERISTICS OF GALLIUM-ARSENIDE ELECTRON DEVICE LETTERS, 1981, 2 (11): : 302 - 304
- [9] CHARACTERISTICS OF NEGATIVE MAGNETORESISTANCE OF GALLIUM-ARSENIDE HEAVILY DOPED WITH TIN SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (03): : 380 - 381
- [10] SUPERMAGNETISM OF GALLIUM-ARSENIDE DOPED WITH IRON FIZIKA TVERDOGO TELA, 1974, 16 (11): : 3485 - 3487