LINEAR MICROWAVE AMPLIFICATION WITH GUNN OSCILLATORS

被引：41
作者：
THIM, HW
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1967年 / ED14卷 / 09期
关键词：
D O I：
10.1109/T-ED.1967.15997
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：517 / +
页数：1
相关论文
共 17 条
[1]  
BARBER MR, PRIVATE COMMUNICATIO
[2]   A SIMPLE ANALYSIS OF STABLE DOMAIN PROPAGATION IN GUNN EFFECT [J].
BUTCHER, PN ;
FAWCETT, W ;
HILSUM, C .
BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (07) :841-&
[3]   ELECTROSTATIC DOMAINS IN 2-VALLEY SEMICONDUCTORS [J].
COPELAND, JA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :189-+
[4]   INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J].
GUNN, JB .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) :141-&
[5]   GAAS POST-THRESHOLD MICROWAVE AMPLIFIER MIXER AND OSCILLATOR [J].
HAKKI, BW .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (02) :299-+
[6]   MICROWAVE PHENOMENA IN BULK GAAS [J].
HAKKI, BW ;
KNIGHT, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :94-+
[7]  
HOBSON GS, 1966, ELECTRON LETT, V2, P207
[8]  
JOSENHANS JG, 1967, P IEEE, V54, P1478
[9]   DOMAIN VELOCITY STABILITY AND IMPEDANCE IN GUNN EFFECT [J].
KNIGHT, BW ;
PETERSON, GA .
PHYSICAL REVIEW LETTERS, 1966, 17 (05) :257-&
[10]   DETAILED THEORY OF NEGATIVE CONDUCTANCE OF BULK NEGATIVE MOBILITY AMPLIFIERS IN LIMIT OF ZERO ION DENSITY [J].
KROEMER, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) :476-+
12