EVIDENCE OF 2-PHASE STRUCTURE IN AMORPHOUS-SILICON OXIDES PRODUCED BY N2O+SIH4 GLOW-DISCHARGE DECOMPOSITION

被引：17

作者：

FORTUNATO, G ^{[1
]}

DELLASALA, D ^{[1
]}

机构：

[1] UNIV ROME LA SAPIENZA,DEPARTIMENTO FIS,I-00185 ROME,ITALY

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷

关键词：

D O I：

10.1016/0022-3093(87)90099-8

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：423 / 426

页数：4

共 9 条

[1] CHARACTERIZATION OF PLASMA-DEPOSITED SILICON DIOXIDE
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[2] A STUDY OF ELECTRONIC STATES IN A-SIOX AND A-SINX THIN-FILMS BY INFRARED, AUGER-ELECTRON AND X-RAY PHOTOELECTRON SPECTROSCOPIES
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[3] PRODUCTION OF SILICON-OXIDES FROM THE GLOW-DISCHARGE DECOMPOSITION OF SILANE AND NO-2
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[J]. THIN SOLID FILMS, 1987, 147 (03) : 259 - 266
[4] ELECTRONIC-STRUCTURE OF HYDROGENATED AND UNHYDROGENATED AMORPHOUS SINX (0-LESS-THAN-X-LESS-THAN-1.6) - A PHOTOEMISSION-STUDY
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[5] INFRARED-ABSORPTION SPECTRA AND COMPOSITIONS OF EVAPORATED SILICON-OXIDES (SIOX)
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[J]. SOLID STATE COMMUNICATIONS, 1984, 50 (12) : 1079 - 1081
[6] INFRARED, RAMAN, AND X-RAY-DIFFRACTION STUDIES OF SILICON-OXIDE FILMS FORMED FROM SIH4 AND N2O CHEMICAL VAPOR-DEPOSITION
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USAMI, K
ITOH, Y
NOZAKI, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (02) : 482 - 488
[7] THE COMPOSITION AND PROPERTIES OF PECVD SILICON-OXIDE FILMS
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NESBIT, LA
DOUSE, RW
GLEASON, RT
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : 2012 - 2019
[8] OPTICAL PROPERTIES OF NON-CRYSTALLINE SI, SIO, SIOX AND SIO2
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (08) : 1935 - &
[9] SILICON MONOXIDE THIN-FILMS
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FLITSCH, R
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (11) : 1754 - 1757

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