MODELING OF REACTIVE SPUTTERING OF COMPOUND MATERIALS

被引:350
作者
BERG, S
BLOM, HO
LARSSON, T
NENDER, C
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 02期
关键词
D O I
10.1116/1.574104
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:202 / 207
页数:6
相关论文
共 12 条
[1]   MECHANISMS OF VOLTAGE-CONTROLLED, REACTIVE, PLANAR MAGNETRON SPUTTERING OF AL IN AR-N2 AND AR-O2 ATMOSPHERES [J].
AFFINITO, J ;
PARSONS, RR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1984, 2 (03) :1275-1284
[2]   THE USE OF NITROGEN FLOW AS A DEPOSITION RATE CONTROL IN REACTIVE SPUTTERING [J].
BERG, S ;
LARSSON, T ;
BLOM, HO .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :594-597
[3]   MASS-FLOW LIMITATIONS IN REACTIVE SPUTTERING [J].
BLOM, HO ;
BERG, S ;
LARSSON, T .
THIN SOLID FILMS, 1985, 130 (3-4) :307-313
[4]   MECHANISMS OF REACTIVE SPUTTERING OF INDIUM .3. A GENERAL PHENOMENOLOGICAL MODEL FOR REACTIVE SPUTTERING [J].
ELTOUKHY, AH ;
NATARAJAN, BR ;
GREENE, JE ;
BARR, TL .
THIN SOLID FILMS, 1980, 69 (02) :229-235
[5]  
HARRA DJ, 1967, NUOVO CIMENTO, V5, P56
[6]   PREFERENTIAL IONIZATION IN REACTIVE SPUTTERING DISCHARGES [J].
HECQ, M ;
HECQ, A ;
FONTIGNIES, M .
THIN SOLID FILMS, 1984, 115 (03) :L45-L48
[7]   PARTIAL-PRESSURE CONTROL OF REACTIVELY SPUTTERED TITANIUM NITRIDE [J].
HMIEL, AF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :592-595
[8]   INFLUENCE OF THE NITROGEN PARTIAL-PRESSURE ON THE PROPERTIES OF DC-SPUTTERED TITANIUM AND TITANIUM NITRIDE FILMS [J].
LEMPERIERE, G ;
POITEVIN, JM .
THIN SOLID FILMS, 1984, 111 (04) :339-349
[9]   VOLTAGE-CONTROLLED, REACTIVE PLANAR MAGNETRON SPUTTERING OF AIN THIN-FILMS [J].
MCMAHON, R ;
AFFINITO, J ;
PARSONS, RR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :376-378
[10]   REACTIVE HIGH-RATE DC SPUTTERING - DEPOSITION RATE, STOICHIOMETRY AND FEATURES OF TIOX AND TINX FILMS WITH RESPECT TO THE TARGET MODE [J].
SCHILLER, S ;
BEISTER, G ;
SIEBER, W .
THIN SOLID FILMS, 1984, 111 (03) :259-268