STRUCTURE DEFECTS IN PYROLTIC SILICON EPITAXIAL FILMS

被引:36
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MILLER, DP
MOORE, CR
WATELSKI, SB
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10.1063/1.1729816
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O59 [应用物理学];
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页码:2813 / &
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共 14 条
[1]  
BATSFORD KO, PRIVATE COMMUNICATIO
[2]   CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J].
BOOKER, GR ;
STICKLER, R .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) :3281-&
[3]   GROWTH MECHANISM AND DEFECT STRUCTURES IN EPITAXIAL SILICON [J].
CHARIG, JM ;
BICKNELL, RW ;
STIRLAND, DJ ;
JOYCE, BA .
PHILOSOPHICAL MAGAZINE, 1962, 7 (83) :1847-&
[4]  
CHU TL, 1963, 1962 C ADV EL MAT PH, V6
[5]  
Ewald PP, 1917, ANN PHYS-BERLIN, V54, P519
[6]  
Ewald PP, 1916, ANN PHYS-BERLIN, V49, P1
[7]  
Ewald PP, 1916, ANN PHYS-BERLIN, V49, P117
[8]   STRUCTURE AND ORIGIN OF STACKING FAULTS IN EPITAXIAL SILICON [J].
FINCH, RH ;
QUEISSER, HJ ;
WASHBURN, J ;
THOMAS, G .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :406-&
[9]   DISLOCATIONS IN THE DIAMOND LATTICE [J].
HORNSTRA, J .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 5 (1-2) :129-141
[10]  
LIGHT TB, 1962, 1961 MET SEM MAT LOS, V5, P137