EXPERIMENT ON THE PHYSICS OF THE PN JUNCTION

被引：11

作者：

SCONZA, A

TORZO, G

VIOLA, G

机构：

来源：

AMERICAN JOURNAL OF PHYSICS | 1994年 / 62卷 / 01期

关键词：

D O I：

10.1119/1.17713

中图分类号：

G40 [教育学];

学科分类号：

040101 ; 120403 ;

摘要：

Simple apparatus, suitable for an undergraduate laboratory, allows precise measurements of the forward characteristics of Si and Ge ''transdiodes'' at different temperatures in the range 150-300 K. The experimental results are used to obtain a fairly accurate value of the universal constant e/k (elementary charge to Boltzmann constant ratio) and of the energy gap of Si and Ge.

引用

页码：66 / 70

页数：5

共 17 条

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