MONOLITHICALLY INTEGRATED 4 X 4 INGAASP INP LASER-AMPLIFIER GATE SWITCH ARRAYS

被引：81

作者：

GUSTAVSSON, M ^{[1
]}

LAGERSTROM, B ^{[1
]}

THYLEN, L ^{[1
]}

JANSON, M ^{[1
]}

LUNDGREN, L ^{[1
]}

MORNER, AC ^{[1
]}

RASK, M ^{[1
]}

STOLTZ, B ^{[1
]}

机构：

[1] ERICSSON COMPONENTS AB,DIV OPTO & MICROWAVE ELECTR,S-16481 KISTA,SWEDEN

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 24期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19921428

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Monolithically integrated 4 x 4 semiconductor laser amplifier gate switch arrays comprising 24 integrated laser amplifiers have been fabricated and evaluated. Net positive optical gain between fibres, high extinction ratio, and low crosstalk are reported.

引用

页码：2223 / 2225

页数：3

共 10 条

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