2-DIMENSIONAL MATHEMATICAL-MODEL OF INSULATED-GATE FIELD-EFFECT TRANSISTOR

被引：101
作者：
MOCK, MS
机构：
[1] IBM COMPONENTS DIV, E FISHKILL LABS, HOPEWELL JUNCTION, NY 12533 USA
[2] NYU, COURANT INST MATH SCI, NEW YORK, NY 10003 USA
来源：
SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 05期
关键词：
D O I：
10.1016/0038-1101(73)90159-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：601 / 609
页数：9
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