2-DIMENSIONAL MATHEMATICAL-MODEL OF INSULATED-GATE FIELD-EFFECT TRANSISTOR

被引：101

|

作者：

MOCK, MS

机构：

[1] IBM COMPONENTS DIV, E FISHKILL LABS, HOPEWELL JUNCTION, NY 12533 USA

[2] NYU, COURANT INST MATH SCI, NEW YORK, NY 10003 USA

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 05期

关键词：

D O I：

10.1016/0038-1101(73)90159-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：601 / 609

页数：9

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