GROWTH MECHANISM OF POLYCRYSTALLINE BETA-SIC LAYERS ON SILICON SUBSTRATE

被引：52
作者：
GRAUL, J
WAGNER, E
机构：
来源：
APPLIED PHYSICS LETTERS | 1972年 / 21卷 / 02期
关键词：
D O I：
10.1063/1.1654282
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：67 / &
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