DC REACTIVE MAGNETRON SPUTTERED NBN THIN-FILMS PREPARED WITH AND WITHOUT HOLLOW-CATHODE ENHANCEMENT

被引：11
|
作者：
DAWSONELLI, DF
FUNG, CA
NORDMAN, JE
机构：
[1] UNIV WISCONSIN,DEPT ELECT & COMP ENGN,MADISON,WI 53706
[2] UNIV WISCONSIN,DEPT IND ENGN,MADISON,WI 53706
来源：
IEEE TRANSACTIONS ON MAGNETICS | 1991年 / 27卷 / 02期
关键词：
D O I：
10.1109/20.133489
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A comparison was made between NbN thin films prepared with and without hollow cathode enhancement of DC reactive magnetron sputtering. The hollow cathode arc source is used in a triode configuration with the magnetron. This design allows sputtering to take place at pressures as low as 5 x 10(-4) Torr, and has been shown to improve process control in the sputtering of oxides from metal targets.1 These films were investigated for application in NbN Josephson junctions. Film deposition parameters have been related to growth rate, stoichiometry as measured by Auger electron spectroscopy (AES), transition temperature, growth texture by X-ray diffraction (XRD), and ellipsometric parameters. The relationships were investigated using factorial experimental design.
引用
收藏
页码：1592 / 1595
页数：4
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