PRESSURE-DEPENDENCE OF THE ELECTRICAL-RESISTIVITY AND THE IONIZATION-ENERGY OF CR IN NORMAL-TYPE INP

被引：7

作者：

NICHOLS, DN

ODEH, I

SLADEK, RJ

机构：

来源：

SOLID STATE COMMUNICATIONS | 1980年 / 34卷 / 08期

关键词：

D O I：

10.1016/0038-1098(80)90940-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：621 / 623

页数：3

共 10 条

[1] PIEZOELECTRIC CONSTANT AND CONDUCTIVITY RELAXATION IN N-TYPE INP FROM ULTRASONIC-ATTENUATION MEASUREMENTS [J].

BOYLE, WF ;

SLADEK, RJ .

SOLID STATE COMMUNICATIONS, 1975, 16 (03) :323-326

[2] INFLUENCE OF HYDROSTATIC PRESSURE AND TEMPERATURE ON DEEP DONOR LEVELS OF SULFUR IN SILICON [J].

CAMPHAUSEN, DL ;

JAMES, HM ;

SLADEK, RJ .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (06) :1899-+

[3] ELECTRONIC STATES OF A SUBSTITUTIONAL CHROMIUM IMPURITY IN GAAS [J].

HEMSTREET, LA ;

DIMMOCK, JO .

PHYSICAL REVIEW B, 1979, 20 (04) :1527-1537

[4] ELASTIC CONSTANTS OF SINGLE-CRYSTAL INDIUM PHOSPHIDE [J].

HICKERNELL, FS ;

GAYTON, WR .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) :462-+

[5]

HILSUM C, 1966, SEMICONDUCTORS SEMIM, V1, P1

[6]

KOVALEVSKAYA GG, 1967, SOV PHYS SEMICOND+, V1, P178

[7]

MULLIN JB, 3RD P INT S GAAS I P, P41

[8] ELECTRICAL-PROPERTIES OF N-TYPE SEMI-INSULATING INDIUM-PHOSPHIDE [J].

PANDE, KP ;

ROBERTS, GG .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (15) :2899-2904

[9] CONDUCTION BAND STRUCTURE OF INP FROM A HIGH PRESSURE EXPERIMENT [J].

PITT, GD .

SOLID STATE COMMUNICATIONS, 1970, 8 (14) :1119-&

[10] ORIGIN OF SHARP NEAR-INFRARED TRANSITIONS IN CHROMIUM DOPED III-V SEMICONDUCTORS [J].

WHITE, AM .

SOLID STATE COMMUNICATIONS, 1979, 32 (03) :205-208

← 1 →