HIGH-TEMPERATURE CREEP OF GAAS

被引：1

作者：

BEHRENSMEIER, R ^{[1
]}

BRION, HG ^{[1
]}

HAASEN, P ^{[1
]}

SIETHOFF, H ^{[1
]}

机构：

[1] UNIV WURZBURG,INST PHYS,W-8700 WURZBURG,GERMANY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1991年 / 124卷 / 02期

关键词：

D O I：

10.1002/pssa.2211240209

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GaAs single crystals are compressed in <111BAR> direction. The dynamical recovery is investigated in the regime of steady-state deformation. It is controlled by cross slip at higher temperatures (T > 820 K) and by climb at lower temperatures (T < 820 K). The activation energy for cross slip is E(q)0 = 5.1 eV. This energy E(q)0 corresponds to a stacking fault energy gamma = 52 mJ/m2.

引用

页码：447 / 453

页数：7

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