H+ AND D+ SPUTTERING OF THIN TANTALUM FILMS IN THE ENERGY-RANGE OF 0.6-KEV TO 15-KEV

The sputtering yield for H** plus and D** plus incident on Ta is measured using simultaneous and coincident Auger analysis and sputter etching of thin Ta films on Cu substrates. The maximum yield is found to be 4. 5 multiplied by 10** minus **3 atoms/ion for H** plus and 1 multiplied by 10** minus **2 atoms/ion for D** plus at an energy of similar 4 keV. Throughout the energy range studied, the data agree well with a semiempirical formula devised earlier for use in determining sputter yields for fusion reactor first wall materials left bracket D. L. Smith, J. Nucl. Mater. 75, 20 (1978) right bracket .