METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF HIGH-QUALITY INGAAS ON INP USING TERTIARY-BUTYLARSINE

We report the growth by low-pressure metalorganic vapor phase epitaxy of lattice-matched InGaAs on InP substrates using tertiarybutylarsine as the arsenic source. The grown layers are uniform in composition and are consistently n type with low background carrier concentrations (2-3×10 15/cm3). Room-temperature mobility as high as 11 200 cm2/V s with a corresponding 77°K mobility of 57 000 cm2/V s are measured. Photoluminescence gave a strong narrow peak with a full width half maximum=3.1 meV, with no evidence of carbon incorporation.