DIFFERENTIATION OF ELECTRON-PARAMAGNETIC-RESONANCE SIGNALS OF ARSENIC ANTISITE DEFECTS IN GAAS

被引：8

作者：

HOINKIS, M ^{[1
]}

WEBER, ER ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT MAT SCI,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.40.3872

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3872 / 3877

页数：6

共 12 条

[1]

Abragam A., 1986, ELECTRON PARAMAGNETI

[2]

GOLTZENE A, 1985, J ELECTRON MATER A, V14, P937

[3] UNIFICATION OF THE PROPERTIES OF THE EL2 DEFECT IN GAAS [J].

HOINKIS, M ;

WEBER, ER ;

WALUKIEWICZ, W ;

LAGOWSKI, J ;

MATSUI, M ;

GATOS, HC ;

MEYER, BK ;

SPAETH, JM .

PHYSICAL REVIEW B, 1989, 39 (08) :5538-5541

[4] INVERTED THERMAL-CONVERSION - GAAS, A NEW ALTERNATIVE MATERIAL FOR INTEGRATED-CIRCUITS [J].

LAGOWSKI, J ;

GATOS, HC ;

KANG, CH ;

SKOWRONSKI, M ;

KO, KY ;

LIN, DG .

APPLIED PHYSICS LETTERS, 1986, 49 (14) :892-894

[5]

MARTIN GM, 1986, DEEP CTR SEMICONDUCT, P399

[6] ANTISITE-RELATED DEFECTS IN PLASTICALLY DEFORMED GAAS [J].

OMLING, P ;

WEBER, ER ;

SAMUELSON, L .

PHYSICAL REVIEW B, 1986, 33 (08) :5880-5883

[7]

POOLE CP, 1983, ELECTRON SPIN RESONA

[8] EFFECT OF PLASTIC-DEFORMATION ON ELECTRONIC-PROPERTIES OF GAAS [J].

SKOWRONSKI, M ;

LAGOWSKI, J ;

MILSHTEIN, M ;

KANG, CH ;

DABKOWSKI, FP ;

HENNEL, A ;

GATOS, HC .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) :3791-3798

[9] SUBMILLIMETER ELECTRON-PARAMAGNETIC-RES EVIDENCE FOR THE ARSENIC ANTISITE DEFECT IN GAAS [J].

WAGNER, RJ ;

KREBS, JJ ;

STAUSS, GH ;

WHITE, AM .

SOLID STATE COMMUNICATIONS, 1980, 36 (01) :15-17

[10]

Weber E. R., 1984, Semi-Insulating III-V materials, P296

← 1 2 →