SCHOTTKY-BARRIER AND PN-JUNCTION I/V PLOTS - SMALL-SIGNAL EVALUATION

被引：419

作者：

WERNER, JH

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1988年 / 47卷 / 03期

关键词：

D O I：

10.1007/BF00615935

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：291 / 300

页数：10

共 20 条

[11] MODULATION EFFECT BY INTENSE HOLE INJECTION IN EPITAXIAL SILICON SCHOTTKY-BARRIER-DIODES [J].

JAGER, H ;

KOSAK, W .

SOLID-STATE ELECTRONICS, 1973, 16 (03) :357-364

[12]

KONUMA M, 1987, IN PRESS 8TH S PLASM

[13] AN IMPROVED FORWARD IV METHOD FOR NONIDEAL SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE [J].

LIEN, CD ;

SO, FCT ;

NICOLET, MA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) :1502-1503

[14] Schottky-barrier height determination in the presence of interfacial disorder [J].

McLean, A. B. ;

Dharmadasa, I. M. ;

Williams, R. H. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (02) :137-142

[15] MODIFIED FORWARD IV PLOT FOR SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE [J].

NORDE, H .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :5052-5053

[16] SATURATION OF JUNCTION VOLTAGE IN STRIPE-GEOMETRY (AIGA)AS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS [J].

PAOLI, TL ;

BARNES, PA .

APPLIED PHYSICS LETTERS, 1976, 28 (12) :714-716

[17]

SATO K, 1985, J APPL PHYS, V58, P3658

[18] MINORITY CARRIER INJECTION AND CHARGE STORAGE IN EPITAXIAL SCHOTTKY BARRIER DIODES [J].

SCHARFETTER, DL .

SOLID-STATE ELECTRONICS, 1965, 8 (03) :299-+

[19]

Sze S., 1981, PHYS SEMICONDUCTOR D, P415, DOI [10.1002/0470068329, DOI 10.1002/0470068329]

[20] INTERFACE-STATE MEASUREMENTS AT SCHOTTKY CONTACTS - A NEW ADMITTANCE TECHNIQUE [J].

WERNER, J ;

PLOOG, K ;

QUEISSER, HJ .

PHYSICAL REVIEW LETTERS, 1986, 57 (08) :1080-1083

← 1 2 →