SCHOTTKY-BARRIER AND PN-JUNCTION I/V PLOTS - SMALL-SIGNAL EVALUATION

被引:419
作者
WERNER, JH
机构
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1988年 / 47卷 / 03期
关键词
D O I
10.1007/BF00615935
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:291 / 300
页数:10
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共 20 条
[1]   REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES [J].
ANDREWS, JM ;
LEPSELTER, MP .
SOLID-STATE ELECTRONICS, 1970, 13 (07) :1011-+
[2]   DERIVATIVE MEASUREMENTS OF CURRENT-VOLTAGE CHARACTERISTICS OF DOUBLE-HETEROSTRUCTURE INJECTION-LASERS [J].
BARNES, PA ;
PAOLI, TL .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1976, 12 (10) :633-639
[3]   GENERALIZED NORDE PLOT INCLUDING DETERMINATION OF THE IDEALITY FACTOR [J].
BOHLIN, KE .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) :1223-1224
[4]   DOPING DEPENDENCE OF THE SCHOTTKY-BARRIER HEIGHT OF TI-PT CONTACTS TO N-GALLIUM ARSENIDE [J].
BROOM, RF ;
MEIER, HP ;
WALTER, W .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) :1832-1833
[5]   STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].
CARD, HC ;
RHODERICK, EH .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+
[6]   EXTRACTION OF SCHOTTKY DIODE PARAMETERS FROM FORWARD CURRENT-VOLTAGE CHARACTERISTICS [J].
CHEUNG, SK ;
CHEUNG, NW .
APPLIED PHYSICS LETTERS, 1986, 49 (02) :85-87
[7]   ON THE CURRENT-VOLTAGE CHARACTERISTICS OF EPITAXIAL SCHOTTKY-BARRIER DIODES [J].
CHUANG, CT .
SOLID-STATE ELECTRONICS, 1984, 27 (04) :299-304
[8]   FORWARD IV PLOT FOR NONIDEAL SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE [J].
CIBILS, RM ;
BUITRAGO, RH .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :1075-1077
[9]   DERIVATIVE MEASUREMENTS OF LIGHT-CURRENT-VOLTAGE CHARACTERISTICS OF (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS [J].
DIXON, RW .
BELL SYSTEM TECHNICAL JOURNAL, 1976, 55 (07) :973-980
[10]  
HENISCH HK, 1984, SEMICONDUCTOR CONTAC, pCH3