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- [2] COMPARISON OF THE EXPERIMENTAL AND THEORETICAL DATA ON THE ANISOTROPY OF CARRIER SCATTERING IN N-TYPE SI SINGLE-CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (06): : 703 - 704
- [3] PHOTOLUMINESCENCE OF N-TYPE CDSNAS2 SINGLE-CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (08): : 963 - 964
- [4] PHOTOCONDUCTIVITY OF N-TYPE CULNSE2 SINGLE-CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (05): : 526 - 528
- [6] PHOTOCONDUCTIVITY IN N-TYPE BETA-FESI2 SINGLE-CRYSTALS PHYSICAL REVIEW B, 1995, 52 (01): : 20 - 23
- [8] SOME PHYSICAL-PROPERTIES OF N-TYPE BITEBR SINGLE-CRYSTALS PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1980, 61 (02): : 419 - 423
- [9] ASYMMETRY OF ISOLATED DISLOCATIONS MOBILITY IN GE AND SI SINGLE-CRYSTALS JOURNAL DE PHYSIQUE, 1983, 44 (NC-4): : 85 - 89
- [10] INVESTIGATION OF THE STATES OF N2 CENTERS IN N-TYPE GAAS SINGLE-CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (06): : 696 - 698