1.3-MU-M LIGHT-EMITTING DIODE FROM SILICON ELECTRON-IRRADIATED AT ITS DAMAGE THRESHOLD

被引：56

作者：

CANHAM, LT

BARRACLOUGH, KG

ROBBINS, DJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 19期

关键词：

D O I：

10.1063/1.98618

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1509 / 1511

页数：3

共 16 条

[1]

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[2]

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[3]

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[5]

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BALIGA, BJ .

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[8] RADIATION RESULTING FROM RECOMBINATION OF HOLES AND ELECTRONS IN SILICON [J].

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WESTPHAL, WC .

PHYSICAL REVIEW, 1956, 101 (06) :1676-1678

[9] OPTICAL INTERCONNECTS REPLACE HARDWIRE [J].

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IEEE SPECTRUM, 1987, 24 (03) :30-35

[10]

IVEY HF, 1963, ADV ELECTRON ELECT S, V1, P145

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