1.3-MU-M LIGHT-EMITTING DIODE FROM SILICON ELECTRON-IRRADIATED AT ITS DAMAGE THRESHOLD

[1] BARRACLOUGH KG, 1986, 5TH P INT S SI MAT S, P129

[2] Bergh A., 1976, LIGHT EMITTING DIODE

[3] CANHAM LT, UNPUB

[4] CARBON IN RADIATION-DAMAGE CENTERS IN CZOCHRALSKI SILICON [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (19): : L499 - L503

[5] DIETRICH HB, 1985, P SOC PHOTO-OPT INST, V530, P195, DOI 10.1117/12.946487

[6] 1.54-MU-M ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1985, 46 (04) : 381 - 383

[7] DOMINANT RECOMBINATION CENTERS IN ELECTRON-IRRADIATED SEMICONDUCTORS DEVICES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) : 913 - 916

[8] RADIATION RESULTING FROM RECOMBINATION OF HOLES AND ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1956, 101 (06): : 1676 - 1678

[9] OPTICAL INTERCONNECTS REPLACE HARDWIRE [J]. IEEE SPECTRUM, 1987, 24 (03) : 30 - 35

[10] IVEY HF, 1963, ADV ELECTRON ELECT S, V1, P145

[1] BARRACLOUGH KG, 1986, 5TH P INT S SI MAT S, P129

[2] Bergh A., 1976, LIGHT EMITTING DIODE

[3] CANHAM LT, UNPUB

[4] CARBON IN RADIATION-DAMAGE CENTERS IN CZOCHRALSKI SILICON [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (19): : L499 - L503

[5] DIETRICH HB, 1985, P SOC PHOTO-OPT INST, V530, P195, DOI 10.1117/12.946487

[6] 1.54-MU-M ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1985, 46 (04) : 381 - 383

[7] DOMINANT RECOMBINATION CENTERS IN ELECTRON-IRRADIATED SEMICONDUCTORS DEVICES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) : 913 - 916

[8] RADIATION RESULTING FROM RECOMBINATION OF HOLES AND ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1956, 101 (06): : 1676 - 1678

[9] OPTICAL INTERCONNECTS REPLACE HARDWIRE [J]. IEEE SPECTRUM, 1987, 24 (03) : 30 - 35

[10] IVEY HF, 1963, ADV ELECTRON ELECT S, V1, P145