TUNNELING IN PERIODIC AND QUASI-PERIODIC SUPERLATTICES

被引:5
作者
SINGH, M
TAO, ZC
TONG, BY
机构
[1] Department of Physics, University of Western Ontario, London
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1992年 / 172卷 / 02期
关键词
D O I
10.1002/pssb.2221720209
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A comparative study of electron tunneling in periodic and quasi-periodic systems is made. The quasi-periodic systems considered are Fibonacci and Thue-Morse superlattices. The transfer matrix method and Landauer formula are used to calculate the electron transmission coefficient and tunneling conductance, respectively. For the numerical calculation the superlattices are considered to be made from GaAs and GaAlAs semiconductors. Numerical calculations are performed for the tunneling conductance for different values of potential barrier height and width- The present calculations show that the peak positions of the tunneling conductance arc at different energies for periodic, Fibonacci, and Thue-Morse superlattices with equal number of layers. The height of peaks changes from one system to another. We also investigated the effect of temperature, damping, and magnetic field on the tunneling conductance in simple approximations. It is found that the peak height of the tunneling conductance decreases as the temperature increases and peak width increases at the same time. As magnetic field increases, the position of peaks of the tunneling conductance shifts to higher energy. The tunneling conductance decreases as the damping increases. These calculations can be extended to hole tunneling in these systems.
引用
收藏
页码:583 / 596
页数:14
相关论文
共 54 条
[1]   THEORETICAL-ANALYSIS OF RAMAN-SPECTRA OF FINITE-STAGE SI/SI-GE FIBONACCI SUPERLATTICES [J].
AERS, GC ;
DHARMAWARDANA, MWC ;
SCHWARTZ, GP ;
BEVK, J .
PHYSICAL REVIEW B, 1989, 39 (02) :1092-1096
[2]   OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT TUNNELLING DEVICES [J].
ALVES, ES ;
EAVES, L ;
HENINI, M ;
HUGHES, OH ;
LEADBEATER, ML ;
SHEARD, FW ;
TOOMBS, GA ;
HILL, G ;
PATE, MA .
ELECTRONICS LETTERS, 1988, 24 (18) :1190-1191
[3]   BALLISTIC ELECTRONIC CONDUCTANCE OF A WIDE ORIFICE [J].
AVISHAI, Y ;
BAND, YB .
PHYSICAL REVIEW B, 1990, 41 (05) :3253-3255
[4]   RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].
CHANG, LL ;
ESAKI, L ;
TSU, R .
APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595
[5]   OBSERVATION OF ELECTRON RESONANT TUNNELING IN A LATERAL DUAL-GATE RESONANT TUNNELING FIELD-EFFECT TRANSISTOR [J].
CHOU, SY ;
ALLEE, DR ;
PEASE, RFW ;
HARRIS, JS .
APPLIED PHYSICS LETTERS, 1989, 55 (02) :176-178
[6]   PROPOSED EXPERIMENTAL REALIZATION OF ANDERSON LOCALIZATION IN RANDOM AND INCOMMENSURATE ARTIFICIALLY LAYERED SYSTEMS [J].
DASSARMA, S ;
KOBAYASHI, A ;
PRANGE, RE .
PHYSICAL REVIEW LETTERS, 1986, 56 (12) :1280-1283
[7]  
EHRENREICH H, 1991, SOLID STATE PHYSICS, V44
[8]   NEW TRANSPORT PHENOMENON IN A SEMICONDUCTOR SUPERLATTICE [J].
ESAKI, L ;
CHANG, LL .
PHYSICAL REVIEW LETTERS, 1974, 33 (08) :495-498
[9]  
ESAKI L, 1989, PHYSICS APPLICATIONS, P1
[10]   OPTICAL MULTISTABILITY IN A NONLINEAR FIBONACCI MULTILAYER [J].
GUPTA, SD ;
RAY, DS .
PHYSICAL REVIEW B, 1988, 38 (05) :3628-3631