PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY IN A-SI-H - EVIDENCE FOR PHONON-ASSISTED ABSORPTION

被引：13
|
作者：
GU, SQ
RAIKH, ME
TAYLOR, PC
机构：
[1] Department of Physics, University of Utah, Salt Lake City
来源：
PHYSICAL REVIEW LETTERS | 1992年 / 69卷 / 18期
关键词：
D O I：
10.1103/PhysRevLett.69.2697
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Photoluminescence in a-Si:H has been investigated using optical excitation energies E(x) varying from 1.27 to 2.0 eV. At low temperatures (T < 100 K) a strong dependence of both the radiative quantum efficiency and the energy distributions of photoexcited carriers on E(x) has been observed for E(x) < 1.65 eV. At higher temperatures (T > 200 K), the dependence of the energy distribution of carriers on E(x) disappears within a narrow interval of temperature. A model of phonon-assisted absorption is proposed to account for the experimental results.
引用
收藏
页码：2697 / 2700
页数：4
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