PHOTOLUMINESCENCE AND RAMAN-SCATTERING SPECTRA FROM POROUS SILICON

被引：2

作者：

INOUE, K ^{[1
]}

MAEHASHI, K ^{[1
]}

NAKASHIMA, H ^{[1
]}

MATSUDA, O ^{[1
]}

MURASE, K ^{[1
]}

机构：

[1] OSAKA UNIV,FAC SCI,DEPT PHYS,TOYONAKA,OSAKA 560,JAPAN

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1992年 / 12卷 / 01期

关键词：

D O I：

10.1016/0749-6036(92)90224-S

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Depth profiles of photoluminescence (PL) and Raman scattering properties of anodized porous Si have been studied by micro-measurement techniques. The depth-structural-inhomogeneity strongly affects the optical properties of porous Si. The Si 2p absorption edge of porous Si has been examined with synchrotron radiation. It is concluded that the PL blue-shift correlates with the low-energy shift of the Raman peak and with the high-energy shift of the Si 2p absorption edge. © 1992.

引用

页码：77 / 80

页数：4

共 5 条

[1] THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION [J].