SURFACE RIPPLING INDUCED IN THIN-FILMS BY A SCANNING LASER

被引：31

作者：

CLINE, HE

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 01期

关键词：

D O I：

10.1063/1.329804

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：443 / 448

页数：6

共 15 条

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[2] SURFACE RIPPLING INDUCED BY SURFACE-TENSION GRADIENTS DURING LASER SURFACE MELTING AND ALLOYING [J].

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APPLIED PHYSICS LETTERS, 1980, 36 (07) :547-550

[7] SOLID-PHASE GROWTH OF LARGE ALIGNED GRAINS DURING SCANNED LASER CRYSTALLIZATION OF AMORPHOUS-GE FILMS ON FUSED-SILICA [J].

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APPLIED PHYSICS LETTERS, 1980, 36 (02) :158-161

[8] CRYSTALLOGRAPHIC ORIENTATION OF SILICON ON AN AMORPHOUS SUBSTRATE USING AN ARTIFICIAL SURFACE-RELIEF GRATING AND LASER CRYSTALLIZATION [J].

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SMITH, HI .

APPLIED PHYSICS LETTERS, 1979, 35 (01) :71-74

[9] ORIGIN OF PERIODIC SURFACE-STRUCTURE OF LASER-ANNEALED SEMICONDUCTORS [J].

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APPLIED PHYSICS LETTERS, 1978, 33 (05) :453-455

[10] HEAT-TRANSFER MODEL FOR CW LASER MATERIAL PROCESSING [J].

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JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :941-947

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