INFLUENCE OF THE SILICON-WAFER CLEANING TREATMENT ON THE SI/SIO2 INTERFACES ANALYZED BY INFRARED-SPECTROSCOPY

被引：9

作者：

GARRIDO, B ^{[1
]}

SAMITIER, J ^{[1
]}

MORANTE, JR ^{[1
]}

FONSECA, L ^{[1
]}

CAMPABADAL, F ^{[1
]}

机构：

[1] CTR NACL MICROELECTRON, E-08193 BARCELONA, SPAIN

来源：

APPLIED SURFACE SCIENCE | 1992年 / 56-8卷

关键词：

D O I：

10.1016/0169-4332(92)90351-W

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The influence of different cleaning processes on the structure of thin silicon oxide layers has been analyzed. The reflection-absorption infrared spectra obtained have allowed the determination of the stress values. We show that these values depend on the oxidation process, annealing history and mainly on the last step of the cleaning method.

引用

页码：861 / 865

页数：5

共 18 条

[11] ANALYSIS OF SURFACE OXIDES OF GAS-EVAPORATED SI SMALL PARTICLES WITH INFRARED-SPECTROSCOPY, HIGH-RESOLUTION ELECTRON-MICROSCOPY, AND X-RAY PHOTOEMISSION SPECTROSCOPY [J].