DEPENDENCE ON CRYSTALLINE FACE OF BAND BENDING IN CS2 O-ACTIVATED GAAS

被引：76

作者：

JAMES, LW

ANTYPAS, GA

EDGECUMBE, J

MOON, RL

BELL, RL

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 12期

关键词：

D O I：

10.1063/1.1659883

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4976 / +

页数：1

共 13 条

[1] 3-5 COMPOUND PHOTOCATHODES - A NEW FAMILY OF PHOTOEMITTERS WITH GREATLY IMPROVED PERFORMANCE [J].

BELL, RL ;

SPICER, WE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (11) :1788-+

[2]

EDEN RC, 1967, THESIS STANFORD U

[3]

GARBE S, 1970, GALLIUM ARSENIDE REL, P208

[4]

HOENE EL, 1970, THESIS TH DARMSTADT

[5] LONG-WAVELENGTH THRESHOLD OF CS2O-COATED PHOTOEMITTERS [J].

JAMES, LW ;

UEBBING, JJ .

APPLIED PHYSICS LETTERS, 1970, 16 (09) :370-&

[6]

JAMES LW, 1969, 1968 P S GAAS, P230

[7] EFFICIENT PHOTOEMISSION FROM GE-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY [J].

SCHADE, H ;

NELSON, H ;

KRESSEL, H .

APPLIED PHYSICS LETTERS, 1971, 18 (04) :121-&

[8] GaAs-Cs: A NEW TYPE OF PHOTOEMITTER [J].

Scheer, J. J. ;

van Laar, J. .

SOLID STATE COMMUNICATIONS, 1965, 3 (08) :189-193

[9] FERMI LEVEL STABILIZATION AT CESIATED SEMICONDUCTOR SURFACES [J].

SCHEER, JJ ;

VANLAAR, J .

SOLID STATE COMMUNICATIONS, 1967, 5 (04) :303-&

[10] PHOTOEMISSION FROM GAAS-CS-O [J].

TURNBULL, AA ;

EVANS, GB .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1968, 1 (02) :155-&

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