ISOTOPIC HYDROGEN-EXCHANGE STUDIES OF THE A-SI-H SURFACE DURING GROWTH

被引:1
作者
ABELSON, JR [1 ]
MANDRELL, L [1 ]
DOYLE, JR [1 ]
MYERS, A [1 ]
MALEY, N [1 ]
机构
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
关键词
D O I
10.1016/0022-3093(89)90107-5
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:184 / 186
页数:3
相关论文
共 2 条
[1]   ARGON SPUTTERING ANALYSIS OF THE GROWING SURFACE OF HYDROGENATED AMORPHOUS-SILICON FILMS [J].
LIN, GH ;
DOYLE, JR ;
HE, MZ ;
GALLAGHER, A .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (01) :188-194
[2]   HYDROGENATED AMORPHOUS-SILICON FILMS DEPOSITED BY REACTIVE SPUTTERING - THE ELECTRONIC-PROPERTIES, HYDROGEN-BONDING AND MICROSTRUCTURE [J].
PINARBASI, M ;
MALEY, N ;
MYERS, A ;
ABELSON, JR .
THIN SOLID FILMS, 1989, 171 (01) :217-233