INFRARED REFLECTANCE SPECTROSCOPY OF VERY THIN-FILMS OF A-SIH

被引:22
作者
MALEY, N [1 ]
SZAFRANEK, I [1 ]
MANDRELL, L [1 ]
KATIYAR, M [1 ]
ABELSON, JR [1 ]
THORNTON, JA [1 ]
机构
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
关键词
D O I
10.1016/0022-3093(89)90100-2
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:163 / 165
页数:3
相关论文
共 8 条
[1]   INFLUENCE OF THE SUBSTRATE ON THE EARLY STAGE OF THE GROWTH OF HYDROGENATED AMORPHOUS-SILICON EVIDENCED BY KINETIC ELLIPSOMETRY [J].
ANTOINE, AM ;
DREVILLON, B .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (02) :360-367
[2]   VIBRATIONAL-SPECTRA OF HYDROGEN IN SILICON AND GERMANIUM [J].
CARDONA, M .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 118 (02) :463-481
[3]   INFRARED-SPECTROSCOPY OF SI(111) AND SI(100) SURFACES AFTER HF TREATMENT - HYDROGEN TERMINATION AND SURFACE-MORPHOLOGY [J].
CHABAL, YJ ;
HIGASHI, GS ;
RAGHAVACHARI, K ;
BURROWS, VA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :2104-2109
[4]   INFRARED ELLIPSOMETRY STUDY OF THE VIBRATIONAL PROPERTIES AND THE GROWTH OF HYDROGENATED AMORPHOUS-SILICON ULTRATHIN FILMS [J].
DREVILLON, B ;
BENFERHAT, R .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (10) :5088-5091
[5]  
Fritzsche, 1989, ADV AMORPHOUS SEMICO, P1003
[6]  
Katz L. E., 1983, VLSI technology, P131
[7]  
MALEY N, IN PRESS
[8]   HYDROGENATED AMORPHOUS-SILICON FILMS DEPOSITED BY REACTIVE SPUTTERING - THE ELECTRONIC-PROPERTIES, HYDROGEN-BONDING AND MICROSTRUCTURE [J].
PINARBASI, M ;
MALEY, N ;
MYERS, A ;
ABELSON, JR .
THIN SOLID FILMS, 1989, 171 (01) :217-233