THEORY OF DEPLETION-LAYER RECOMBINATION IN SILICON P-N-JUNCTIONS

被引：5

作者：

ANDERSON, PJ

BUCKINGHAM, MJ

机构：

[1] UNIV READING,JJ THOMPSON PHYS LAB,READING RG6 2AL,BERKSHIRE,ENGLAND

[2] ROYAL AIRCRAFT ESTAB,DEPT RADIO & NAVIGAT,FARNBOROUGH GU14 6TD,HAMPSHIRE,ENGLAND

来源：

ELECTRONICS LETTERS | 1977年 / 13卷 / 17期

关键词：

D O I：

10.1049/el:19770364

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：496 / 498

页数：3

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