GAAS IMPATT DIODES PREPARED BY MOLECULAR-BEAM EPITAXY

被引：34
作者：
CHO, AY
DUNN, CN
KUVAS, RL
SCHROEDER, WE
机构：
[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
[2] BELL TEL LABS INC, READING, PA 19604 USA
[3] BELL TEL LABS INC, ALLENTOWN, PA 18103 USA
来源：
APPLIED PHYSICS LETTERS | 1974年 / 25卷 / 04期
关键词：
D O I：
10.1063/1.1655449
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：224 / 226
页数：3
相关论文
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