DETERMINATION OF LATTICE-PARAMETERS AT THIN EPITAXIAL LAYERS BY RHEED

被引：8

作者：

TEMPEL, A

SCHUMANN, B

机构：

来源：

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY | 1979年 / 14卷 / 05期

关键词：

D O I：

10.1002/crat.19790140510

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A simple method is described for measurement of lattice parameters of thin heteroepitaxial layers by RHEED technique using the substrate as a calibration substance. Results are presented for special cases of I–III–VI2 chalcopyrite type semiconductor epilayers on GaAs substrates. The accuracy of the method is in the order of about 5 · 10−3. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：571 / 574

页数：4

共 5 条

[1] GROWTH AND ELECTRICAL-PROPERTIES OF EPITAXIAL CUINS2 THIN-FILMS ON GAAS SUBSTRATES
NEUMANN, H
SCHUMANN, B
PETERS, D
TEMPEL, A
KUHN, G
[J]. KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1979, 14 (04): : 379 - 388
[2] EPITAXIAL LAYERS OF CUINSE2 ON GAAS
SCHUMANN, B
GEORGI, C
TEMPEL, A
KUHN, G
VANNAM, N
NEUMANN, H
HORIG, W
[J]. THIN SOLID FILMS, 1978, 52 (01) : 45 - 52
[3] STRUCTURAL AND ELECTRICAL-PROPERTIES OF CUGASE2 THIN-FILMS ON GAAS SUBSTRATES
SCHUMANN, B
TEMPEL, A
KUHN, G
NEUMANN, H
NAM, NV
HANSEL, T
[J]. KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1978, 13 (11): : 1285 - 1295
[4] SCHUMANN B, UNPUBLISHED
[5] Shay J. L., 1975, TERNARY CHALCOPYRITE

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