KINETICS OF DRY OXIDATION OF SILICON .1. SPACE-CHARGE-LIMITED GROWTH

被引：28

作者：

WOLTERS, DR

ZEGERSVANDUYNHOVEN, ATA

机构：

来源：

关键词：

D O I：

10.1063/1.343191

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5126 / 5133

页数：8

共 42 条

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[3]

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[4]

Fehlner F. P., 1986, LOW TEMPERATURE OXID

[5]

Fromhold A.T., 1976, THEORY METAL OXIDATI, V1

FROMHOLD, AT .

[7]

GRUNTHANER FJ, 1987, J APPL PHYS, V61, P635

[8]

Hall H.S., 1948, ANAL THEORY CONTINUE

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HAMASAKI, M .