AUGER-SPUTTER PROFILING STUDY OF PHOSPHORUS PILEUP AT SI-SIO2 INTERFACE

被引：2

作者：

SCHWARZ, SA ^{[1
]}

HELMS, CR ^{[1
]}

SPICER, WE ^{[1
]}

TAYLOR, NJ ^{[1
]}

机构：

[1] VARIAN ASSOC,PALO ALTO,CA 94305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 04期

关键词：

D O I：

10.1116/1.569778

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1519 / 1519

页数：1

共 6 条

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SAH, CT ;

LEISTIKO, O .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) :2695-&

[2] NEW STUDIES OF SI-SIO2 INTERFACE USING AUGER SPUTTER PROFILING [J].

HELMS, CR ;

SPICER, WE ;

JOHNSON, NM .

SOLID STATE COMMUNICATIONS, 1978, 25 (09) :673-676

[3] THERMAL-OXIDATION OF HEAVILY PHOSPHORUS-DOPED SILICON [J].

HO, CP ;

PLUMMER, JD ;

MEINDL, JD ;

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) :665-671

[4]

JOHANNESSEN JS, UNPUBLISHED

[5] HIGH-RESOLUTION AUGER SPUTTER PROFILING STUDY OF EFFECT OF PHOSPHORUS PILEUP ON SI-SIO2 INTERFACE MORPHOLOGY [J].

SCHWARZ, SA ;

HELMS, CR ;

SPICER, WE ;

TAYLOR, NJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :227-230

[6] CRATER-EDGE PROFILING IN INTERFACE ANALYSIS EMPLOYING ION-BEAM ETCHING AND AES [J].

TAYLOR, NJ ;

JOHANNESSEN, JS ;

SPICER, WE .

APPLIED PHYSICS LETTERS, 1976, 29 (08) :497-499

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