NEAR BAND EDGE OPTICAL ABSORPTION PRODUCED BY ION IMPLANTATION IN GAAS

被引：19

作者：

BORDERS, JA

机构：

来源：

APPLIED PHYSICS LETTERS | 1971年 / 18卷 / 01期

关键词：

D O I：

10.1063/1.1653461

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：16 / &

共 17 条

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[3]

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[8] EFFECTS OF NEUTRON IRRADIATION ON OPTICAL PROPERTIES OF THIN FILMS AND BULK GAAS AND GAP [J].

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[9] ELECTRICAL STUDIES OF LOW-TEMPERATURE NEUTRON- AND ELECTRON-IRRADIATED EPITAXIAL NORMAL-TYPE GAAS [J].

STEIN, HJ .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (13) :5300-+

[10] DIRECT EVIDENCE OF DIVACANCY FORMATION IN SILICON BY ION IMPLANTATION [J].

STEIN, HJ ;

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BORDERS, JA .

APPLIED PHYSICS LETTERS, 1969, 14 (10) :328-&

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