DRY-ETCHED INORGANIC RESIST

被引：51

作者：

CHANG, MS

CHEN, JT

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 10期

关键词：

D O I：

10.1063/1.90206

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：892 / 895

页数：4

共 17 条

[1]

ABE H, 1975, J JAPAN SOC APPL P S, V44, P287

[2]

BERSIN RL, 1976, SOLID STATE TECHNOL, V19, P31

[3] DIFFRACTION EFFICIENCY OF CONTINUOUSLY ETCHED GRATINGS IN AS2S3 FILMS [J].

CHANG, MS ;

HOU, TW .

OPTICS COMMUNICATIONS, 1978, 24 (02) :220-224

[4]

DENEUFVILLE JP, 1974, J NON-CRYST SOLIDS, V13, P191, DOI 10.1016/0022-3093(74)90091-X

[5] KINETICS OF PHOTO-DISSOLUTION OF AG IN AMORPHOUS AS2S3 FILMS [J].

GOLDSCHMIDT, D ;

RUDMAN, PS .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 22 (02) :229-243

[6] LOCALIZED ELECTRON-STATES IN ARSENIC CHALCOGENIDES [J].

HALPERN, V .

PHILOSOPHICAL MAGAZINE, 1976, 34 (03) :331-335

[7]

JANAI M, 1976, PHOTOGR SCI ENG, V20, P234

[8] SURFACE RELIEF HOLOGRAMS IN EVAPORATED ARSENIC TRISULFIDE FILMS [J].

KENEMAN, SA .

THIN SOLID FILMS, 1974, 21 (02) :281-285

[9] CHEMICAL DURABILITY OF ARSENIC-SULFUR-IODINE GLASSES [J].

LIN, FC ;

HO, SM .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1963, 46 (01) :24-28

[10] NEW APPLICATION OF SE-GE GLASSES TO SILICON MICROFABRICATION TECHNOLOGY [J].

NAGAI, H ;

YOSHIKAWA, A ;

TOYOSHIMA, Y ;

OCHI, O ;

MIZUSHIMA, Y .

APPLIED PHYSICS LETTERS, 1976, 28 (03) :145-147

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